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A2T21H450W19Sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 89 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =30vdc, i dqa = 800 ma, v gsb =0.7vdc,p out = 89 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2110 mhz 15.7 46.1 8.0 ?31.4 2145 mhz 15.7 46.2 8.0 ?33.9 2180 mhz 15.7 45.9 7.8 ?36.1 2200 mhz 15.6 45.4 7.8 ?35.6 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage range for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? designed for digital predistortion error correction systems document number: A2T21H450W19S rev. 0, 9/2016 freescale semiconductor technical data 2110?2200 mhz, 89 w avg., 30 v airfast rf power ldmos transistor A2T21H450W19Sr6 ni--1230s--4s4s (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw ad (2) vbw bd (2) 8 5 27 36 carrier peaking figure 1. pin connections 1. pin connections 6 and 7 are dc coupled and rf independent. 2. device cannot operate with v dd current supplied through pins 1, 4, 5 and 8. vbw ag (2) vbw bg (2) 1 4 (1) ? freescale semiconductor, inc., 2016. all rights reserved.
2 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 236 1.3 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 74 ? c, 89 w avg., w--cdma, 30 vdc, i dqa = 800 ma, v gsb =0.7vdc, 2145 mhz r ? jc 0.26 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d = 200 ? adc) v gs(th) 1.2 1.8 2.1 vdc gate quiescent voltage (v dd =30vdc,i d = 800 madc, measured in functional test) v gsa(q) 2.1 2.5 2.9 vdc drain--source on--voltage (v gs =10vdc,i d =2adc) v ds(on) 0.05 0.17 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d = 300 ? adc) v gs(th) 0.8 1.3 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =3adc) v ds(on) 0.05 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. side a and side b are tied together for these measurements. (continued)
A2T21H450W19Sr6 3 rf device data freescale semiconductor, inc. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc, p out = 89 w avg., f = 2110 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 14.5 15.7 17.5 db drain efficiency ? d 43.0 46.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.3 8.0 ? db adjacent channel power ratio acpr ? ?31.4 ?29.5 dbc load mismatch (3) (in freescale doherty test fixture, 50 ohm system) i dqa = 800 ma, v gsb = 0.7 vdc, f = 2145 mhz, 12 ? sec(on), 10% duty cycle vswr 10:1 at 32 vdc, 560 w pulsed cw output power (3 db input overdrive from 513 w pulsed cw rated power) no device degradation typical performance (3) (in freescale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc, 2110?2180 mhz bandwidth p out @ 1 db compression point, cw p1db ? 390 (4) ? w p out @ 3 db compression point (5) p3db ? 525 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2180 mhz bandwidth) ? ? ?26 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 150 ? mhz gain flatness in 70 mhz bandwidth @ p out =89wavg. g f ? 0.15 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.011 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) (4) ? p1db ? 0.006 ? db/ ? c table 5. ordering information device tape and reel information package A2T21H450W19Sr6 r6 suffix = 150 units, 56 mm tape width, 13--inch reel ni--1230s--4s4s 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurements made with device in an a symmetrical doherty configuration. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 figure 2. A2T21H450W19Sr6 test circuit component layout r2 c2 c5 c15 c17 c20 c3 c1 c16 c22 c18 c9 c19 c21 c24 c25 c26 c4 c23 c8 z1 c7 c11 c14 c12 c13 rev. 0 a2t21h450w c27 c28 c29 c30 c31 c32 c34 c33 c35 r3 c10 r1 d65278 v gga v dda v ggb v ddb z2 c6 note: v dda and v ddb must be tied together and powered by a single dc power supply. cut out area c p table 6. A2T21H450W19Sr6 test circui t component designations and values part description part number manufacturer c1, c2, c23, c25, c26 10 ? f chip capacitors c5750x7s2a106m230kb tdk c3, c7, c11, c12, c13, c14, c24 4.7 ? f chip capacitors c4532x7s2a475m230kb tdk c4, c5, c6, c8, c9, c19, c20, c21, c22, c29, c30 10 pf chip capacitors atc600s100jt250xt atc c10, c28 0.5 pf chip capacitors atc600s0r5bt250xt atc c15, c16 3 pf chip capacitors atc600s3r0bt250xt atc c17, c18 8.2 pf chip capacitors atc600s8r2bt250xt atc c27 0.2 pf chip capacitor atc600s0r2bt250xt atc c31, c32 220 ? f, 100 v electrolytic capacitors eevfk2a221m panasonic-ecg c33, c35 0.6 pf chip capacitors atc600s0r6bt250xt atc c34 1.1 pf chip capacitor atc600s1r1bt250xt atc r1, r2 3.3 ? , 1/8 w chip resistors wcr0805-3r3f welwyn r3 10 ? , 1/8 w chip resistor wcr0805-10rf welwyn z1 50 ? , 10 w surface mount terminator c10a50z4 anaren z2 2000?2300 mhz band, 90 ? , 5 db directional coupler x3c21p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65278 mtl
A2T21H450W19Sr6 5 rf device data freescale semiconductor, inc. typical characteristics ? 2110?2180 mhz 2060 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 89 watts avg. 14.4 16.4 16.2 16 ?39 48 47 46 45 ?24 ?27 ?30 ?33 ? d , drain efficiency (%) g ps , power gain (db) 15.8 15.6 15.4 15.2 15 14.8 14.6 2080 2100 2120 2140 2160 2180 2200 2220 44 ?36 acpr (dbc) v dd =30vdc,p out =89w(avg.),i dqa = 800 ma, v gsb =0.7vdc single--carrier w--cdma, 3.84 mhz channel bandwidth figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?75 0 ?15 ?30 ?60 1 100 imd, intermodulatio n distortion (dbc) ?45 im5--u im5--l im7--l im7--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 60 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 40 80 100 160 33 51 48 45 42 39 36 ? d ? drain efficiency (%) ?1 db = 65 w 120 ? d acpr parc acpr (dbc) ?36 ?30 ?31 ?32 ?34 ?33 ?35 15.9 g ps , power gain (db) 15.8 15.7 15.6 15.5 15.4 15.3 g ps ?3 db = 117.5 w ?2 db = 89 w parc (db) ?2.4 ?2 ?2.1 ?2.2 ?2.5 ?5 input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf im3--l 1 v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc f = 2145 mhz ?2.3 300 im3--u v dd =30vdc,p out = 16 w (pep), i dqa = 800 ma v gsb = 0.7 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2145 mhz acpr ? d parc g ps 140 single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf
6 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 typical characteristics ? 2110?2180 mhz g ps , power gain (db) 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?20 ?30 8 20 0 60 50 40 30 20 ? d , drain efficiency (%) 18 16 10 100 500 10 0 acpr (dbc) 14 12 10 ?10 ?40 ?50 ?60 figure 7. broadband frequency response 3 21 f, frequency (mhz) v dd =30vdc p in =0dbm i dqa = 800 ma v gsb =0.7vdc 15 12 9 gain (db) 18 6 2000 2060 2120 2180 2240 2300 2360 2420 2480 gain 2145 mhz v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc single--carrier w--cdma 2200 mhz 2180 mhz 2145 mhz 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0. 01% probab ility on ccdf 2110 mhz 2180 mhz 2110 mhz 2145 mhz 2180 mhz 2200 mhz 2110 mhz 2200 mhz ? d
A2T21H450W19Sr6 7 rf device data freescale semiconductor, inc. table 7. carrier side load pull performance ? maximum power tuning v dd =30vdc,i dqa = 800 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.39 ? j6.73 1.34 + j6.50 1.16 ? j4.54 16.8 53.9 243 58.6 ?10 2140 1.37 ? j6.83 1.50 + j6.72 1.12 ? j4.39 16.9 53.8 241 58.1 ?11 2170 1.51 ? j7.19 1.74 + j7.00 1.13 ? j4.33 16.9 53.7 236 58.1 ?12 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.39 ? j6.73 1.24 + j6.66 1.12 ? j4.64 14.6 54.6 288 59.4 ?15 2140 1.37 ? j6.83 1.41 + j6.91 1.11 ? j4.55 14.7 54.5 283 58.8 ?16 2170 1.51 ? j7.19 1.65 + j7.21 1.11 ? j4.49 14.7 54.4 277 58.4 ?16 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =30vdc,i dqa = 800 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.39 ? j6.73 1.28 + j6.62 2.70 ? j3.63 19.4 51.9 155 70.8 ?18 2140 1.37 ? j6.83 1.43 + j6.86 2.64 ? j3.15 19.7 51.4 139 70.5 ?20 2170 1.51 ? j7.19 1.67 + j7.16 2.53 ? j2.96 19.7 51.3 134 69.7 ?21 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.39 ? j6.73 1.19 + j6.71 2.34 ? j4.10 16.9 53.2 209 70.3 ?21 2140 1.37 ? j6.83 1.36 + j6.97 2.37 ? j3.82 17.2 52.9 195 69.5 ?23 2170 1.51 ? j7.19 1.60 + j7.28 2.23 ? j3.76 17.0 53.0 199 68.6 ?23 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 table 9. peaking side load pull performance ? maximum power tuning v dd =30vdc,v gsb =0.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.91 ? j5.28 1.01 + j5.04 2.20 ? j4.87 14.7 56.2 413 55.6 ?30 2140 1.15 ? j5.62 1.16 + j5.29 2.33 ? j4.74 14.8 56.1 409 56.0 ?31 2170 1.45 ? j5.72 1.42 + j5.60 2.34 ? j4.65 15.0 56.0 402 55.5 ?30 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.91 ? j5.28 1.05 + j5.19 2.32 ? j5.14 12.5 56.9 487 58.4 ?38 2140 1.15 ? j5.62 1.23 + j5.47 2.41 ? j5.02 12.6 56.8 481 58.0 ?38 2170 1.45 ? j5.72 1.52 + j5.79 2.46 ? j4.90 12.8 56.7 472 57.4 ?36 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =30vdc,v gsb =0.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.91 ? j5.28 0.95 + j5.01 4.20 ? j2.40 15.7 54.4 277 65.5 ?37 2140 1.15 ? j5.62 1.09 + j5.26 3.55 ? j2.11 15.8 54.4 274 64.9 ?37 2170 1.45 ? j5.72 1.31 + j5.54 3.09 ? j2.00 16.0 54.3 271 65.4 ?37 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 0.91 ? j5.28 1.01 + j5.17 4.09 ? j3.52 13.6 55.7 371 63.3 ?43 2140 1.15 ? j5.62 1.17 + j5.44 3.96 ? j2.72 13.6 55.4 343 62.8 ?44 2170 1.45 ? j5.72 1.43 + j5.76 3.52 ? j2.02 13.9 54.9 312 63.4 ?44 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
A2T21H450W19Sr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 2140 mhz -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power 53.5 52 53 52.5 51.5 51 50.5 50 64 58 60 62 54 56 66 -- 7 -- 3 imaginary ( ? ) 2 34 06 -- 4 -- 5 5 -- 6 1 figure 8. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) -- 7 -- 3 2 34 06 -- 4 -- 5 5 -- 6 1 figure 9. p1db load pull efficiency contours (%) real ( ? ) -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) p e -- 1 -- 2 70 p e 68 -- 1 -- 2 p e 20.5 17 17.5 19.5 19 18.5 18 20 -- 7 -- 6 p e -- 7 -- 6 -- 2 4 -- 2 2 -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 1 0 -- 1 2 -- 8
10 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 p3db -- typical carrier side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 12. p3db load pull output power contours (dbm) real ( ? ) 51.5 imaginary ( ? ) -- 5 -- 1 2 34 06 -- 2 -- 3 5 -- 4 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) 64 58 60 62 54 56 68 66 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 14. p3db load pull gain contours (db) real ( ? ) 15.5 16 16.5 17 14.5 17.5 18.5 15 18 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) -- 2 8 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 1 2 -- 1 8 -- 1 4 -- 1 6 p e 50.5 51 53.5 54 52 52.5 53 p e -- 7 -- 6 -- 7 -- 6 e p -- 7 -- 6 p e -- 7 -- 6
A2T21H450W19Sr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 4 2 -- 3 8 -- 3 6 -- 3 4 -- 3 2 -- 3 0 -- 4 0 53.5 54 55.5 55 54.5 52 53 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 16. p1db load pull output power contours (dbm) real ( ? ) -- 5 -- 1 2 34 06 -- 2 -- 3 5 -- 4 1 figure 17. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 64 58 60 50 62 52 54 56 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 18. p1db load pull gain contours (db) real ( ? ) 15 15.5 14 14.5 13.5 12.5 13 12 16 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 56 -- 7 -- 6 p e 48 p e -- 7 -- 6 e p -- 7 -- 6 -- 4 4 -- 7 -- 6 p e -- 3 6
12 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 p3db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 4 2 -- 3 8 -- 3 6 -- 5 0 -- 4 8 -- 4 6 -- 4 4 -- 4 0 55.5 55 56.5 56 54.5 54 53.5 53 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 20. p3db load pull output power contours (dbm) real ( ? ) -- 5 -- 1 2 34 06 -- 2 -- 3 5 -- 4 1 figure 21. p3db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 50 58 60 48 62 52 54 56 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 22. p3db load pull gain contours (db) real ( ? ) 11 14 10.5 13.5 12.5 13 12 11.5 -- 5 -- 1 imaginary ( ? ) 2 34 06 -- 2 -- 3 5 -- 4 1 figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) p e -- 7 -- 6 -- 7 -- 6 46 e p 10 -- 7 -- 6 p e p e -- 7 -- 6
A2T21H450W19Sr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. A2T21H450W19Sr6
A2T21H450W19Sr6 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 sept. 2016 ? initial release of data sheet
16 rf device data freescale semiconductor, inc. A2T21H450W19Sr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2016 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: A2T21H450W19S rev. 0, 9/2016

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